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Control of transcriptional activity by design of charge patterning in the intrinsically disordered RAM region of the Notch receptor.

Proc. Natl. Acad. Sci. U.S.A.. 2017; 
Sherry Kathryn P,Das Rahul K,Pappu Rohit V,Barrick
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摘要

Intrinsically disordered regions (IDRs) play important roles in proteins that regulate gene expression. A prominent example is the intracellular domain of the Notch receptor (NICD), which regulates the transcription of Notch-responsive genes. The NICD sequence includes an intrinsically disordered RAM region and a conserved ankyrin (ANK) domain. The 111-residue RAM region mediates bivalent interactions of NICD with the transcription factor CSL. Although the sequence of RAM is poorly conserved, the linear patterning of oppositely charged residues shows minimal variation. The conformational properties of polyampholytic IDRs are governed as much by linear charge patterning as by overall charge content. Here, ... More

关键词

Notch signaling,ankyrin repeats,intrinsically disordered proteins,sequence design,transcriptional activa